Device-level, not coupon-level
Characterize the device in its final package, not a test structure cut from a wafer. Real geometry, real interfaces, real heat paths.
MICROSANJ PLATFORM OVERVIEW
The measurement authority for
next-generation chips
Three integrated measurement disciplines. One platform. From nanoscale thermal imaging to materials characterization to multiphysics field imaging.
Materials characterization
Thermal conductivity & TBR
One integrated platform
Non-contact · spatially resolved · one station
WHY IT MATTERS
Point solutions leave measurement gaps at the device level
Advanced chips fail for reasons that no single instrument can see. A thermal imager tells you where it's hot. A TDTR system tells you what a bulk material conducts. A field probe tells you where current flows. None of them tell you the full story on a real packaged device patterned, integrated, running under realistic bias conditions.
Microsanj is purpose-built to close those gaps: non-contact, spatially resolved, operating on the actual device, at the same measurement station.
Spatially resolved across all three pillars
Every measurement is an image, not a single-point number. See where conductivity changes, where interfaces resist heat flow, where EM fields concentrate.
Simulation validation built in
TR imaging has been used to validate COMSOL, ANSYS, and Beamprop thermal models across dozens of published studies. Measure first, then model with confidence.
Microsanj by the numbers
19+
Years of commercial systems
100+
Peer-reviewed publications
20+
Countries with deployed systems
100+
Customers worldwide
MEASURE WHAT MATTERS
Every discipline the next generation of chips demands
From sub-250 nm thermal maps to wide-bandgap material conductivity to concurrent RF/EM field and thermal imaging on one integrated platform.
THERMAL IMAGING
Thermoreflectance thermal imaging
Visible-light thermoreflectance (TR) imaging delivers sub-wavelength spatial resolution and sub-millisecond time resolution on any device surface, including metals, where IR cameras produce no signal at all. Lock-in averaging achieves thermal sensitivity below 1 mK.
The platform pairs TR with dedicated LWIR infrared imaging for a complete thermal workflow: use the EZ100A-irSCOPE™ to rapidly screen a package or PCB at up to 72 mm × 61 mm field of view, then zero in on the region of interest with TR imaging at sub-300 nm resolution. Two modalities, one platform, one software environment.
Read more about the different applications →<250 nmSpatial resolution
±0.1 °CTemperature resolution
500 psTime resolution (optional upgrade)
<1 mKSensitivity with lock-in averaging
Where it's used
- GaN RF transistors — gate-level hot-spot mapping
- 3D-IC / HBM stacks — interface thermal resistance
- Silicon photonics — waveguide, laser, and photodiode characterization
- Power electronics — SiC/GaN device-level thermal analysis
- Failure analysis — non-destructive hot-spot localization
0.1–1000W/m·K conductivity range
TBRInterface resistance at heterogeneous junctions
Non-contactNo sample prep, no coupon required
κ mapSpatially resolved — not a single-point average
Where it's used
- GaN-on-diamond — TBR at the nucleation-layer interface
- Wide-bandgap substrates — AlN, SiC, bulk Ga₂O₃ conductivity
- 2.5D-3D materials — MoS₂, h-BN, graphene thermal properties
- Advanced packaging dielectrics — underfill and molding-compound κ
- Passivation layer comparison — SiO₂ vs. poly-Si thermal resistance
MATERIALS CHARACTERIZATION
Thermal conductivity and interface resistance
Wide-bandgap semiconductors (GaN, SiC, AlN), diamond substrates, 2.5D-3D materials, and novel dielectrics the materials driving next-generation power density require thermal property measurements that traditional test structures cannot provide on integrated devices.
Microsanj's spatially resolved approach measures bulk thermal conductivity (κ) and thermal boundary resistance (TBR) at heterogeneous interfaces on the actual device, not a polished bulk coupon. Conductivity range spans 0.1 to 1000 W/m·K, covering insulators through diamond.
The technique builds on the TDTR (time-domain thermoreflectance) heritage pioneered at the University of Illinois at Urbana-Champaign, extended to patterned, packaged devices where academic TDTR setups cannot operate.
Materials characterization applications →MULTIPHYSICS & EM FIELD IMAGING
Concurrent thermal and EM field imaging
Modern RF and power devices fail at the intersection of thermal and electromagnetic phenomena: current crowding, substrate coupling, and field-induced heating that no single measurement captures alone. The Microsanj platform integrates concurrent RF/EM field and thermal imaging on the same device, at the same operating point.
The emVIEW™ system, developed in partnership with the University of Wisconsin, extends the platform into quantitative RF/EM field measurement, mapping the electric and magnetic near-fields that drive the thermal behavior, not just the resulting temperature distribution.
RF/EM and 5G/6G applications →ConcurrentThermal + EM field in a single acquisition
emVIEW™EM field imaging module
GaN / SiCRF and power device focus
MPI-readyIntegrated probe-station compatible
Where it's used
- GaN HEMT — current crowding and hot-spot correlation
- RF power amplifiers — EM field distribution at operating frequency
- Power module interconnects — coupled thermal and current-density maps
- Wide-bandgap devices — multiphysics failure-mode identification
PLATFORM PRODUCTS
A platform that grows with you
Start with the configuration you need today. Add materials characterization or upgrade your system without starting over your investment carries forward.
The measurement platform your next device needs
Whether you're characterizing a GaN transistor, measuring TBR in a diamond substrate, or correlating EM fields with thermal runaway, the Microsanj platform has a measurement path for it. Talk to our applications team.
