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See inside.
Measure everything.
The only commercial platform that combines thermal imaging, materials characterization, RF, and EM field imaging for advanced semiconductor devices, from picoseconds to DC, and from surface to buried structures.
Si
Silicon
CMOS · 3D IC
GaN
Gallium Nitride
RF · Power
SiC
Silicon Carbide
EV · Power
InP
Indium Phosphide
Photonics
Cu
Copper
Interconnect
Diamond
Heat Spread
Polymers
Encapsulant
Dielectrics
Isolation
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Trusted by Engineers
Microsanj proudly serves a diverse range of customers worldwide.
19+
Years of Commercial Systems
100+
Papers Published
20+
Countries Served
100+
Customers
THE PLATFORM
Three capabilities. One platform.
No other commercial system bridges all three domains. Together, they enable the multiphysics understanding of device performance that single-domain tools can never provide.
Thermal Imaging
Full-field thermoreflectance imaging of operating devices. Sub-micron spatial resolution. Nanosecond-to-picosecond temporal resolution. IR + TR dual mode from macro hotspot location to sub-micron zoom.
GaN / SiC
RF devices
Si Photonics
3DHI
Flip chip
Materials Characterization
In-plane and cross-plane thermal conductivity. Thermal boundary resistance. Thin-film analysis from 10 nm to hundreds of microns on the actual device stack, not a proxy. NOSH-TDTR + POSH-TDTR.
TBR / TSV
Diamond
Thin films
Interposers
Ga₂O₃
Multiphysics RF/EM imaging
Together, you can perform multiphysics analysis of device performance, correlating thermal, electrical, and RF behavior on the same device. emVIEW™ extends this to near-field EM mapping without an anechoic chamber.
Pulsed-IV
RF correlation
AlP / AoC
mmWave
emVIEW
<250 nm
Spatial resolution
10–50× better than IR
500 ps
Temporal resolution
captures the RF switching dynamics
±0.1°C
Temperature resolution
CTR cal ±0.5×10⁻⁵
0.1–1000 W/m·K
Thermal conductivity range
USE CASES
Built for the engineer and technician in front of the problem
Different challenges. Adaptable for multiple industry solutions.
RF, 5G & 6G Device Analysis
Your DC I-V curve is hiding trap effects and self-heating. Correlated pulsed-IV + thermal shows what your electrothermal model is missing.
Advanced packaging / 3DHI
Heat doesn't move through your 3D stack the way your model predicts. See cross-plane and in-plane thermal behavior at the interface level, non-destructively.
Failure analysis
By the time you've shipped the wafer and rebuilt the test setup, you've lost the in-situ bias state. Thermal imaging at the probe station changes the sequence.
Materials characterization
Thermal conductivity on your actual device stack, not a proxy sample, not a simulation. From 10 nm films to multi-layer 3D structures.
Silicon photonics
Junction temperature, thermal crosstalk, and interface resistance, measured through silicon, on operating devices, without destruction.
mmWave antenna analysis
Near-field EM mapping of AiP/AoC modules, scalar, gradient, and vector field reconstruction. No anechoic chamber. In your lab.
THE MEASUREMENT GAP
Current tools missing the story?
When devices fail or thermal models are wrong, it's rarely because of what you measured. It's because of what you couldn't.
IR thermography fails at the channel level
GaN-on-SiC is transparent in IR — you're reading substrate emission, not the 2DEG. Channel temperature underreported by up to 2×.
Raman is too slow for production
Point-by-point scanning takes hours per device. Impractical for failure analysis workflows.
DC I-V hides what matters at RF
Self-heating and trap effects are inseparable without pulsed-IV correlation. Your electrothermal model is wrong before it starts.
3D stacks hide thermal bottlenecks
Interface resistance, buried hotspots, and cross-plane anisotropy are invisible to surface-only measurements.
PRODUCTS
The SanjSCOPE™ platform family
Configurable architecture. Buy what you need now. Upgrade as your application evolves.
EZ-THERM Series
Active device R&D and production. Dual mode Thermoreflectance + IR. Up to 3 sensors.
- 50 µs / 5 µs transient
- NOSH-TDTR add-on
NT Series
Active device R&D and production. Dual mode Thermoreflectance + IR. Up to 3 sensors.
- 50 ns / 500 ps transient
- NOSH-TDTR add-on
Time Domain Thermoreflectance (TDTR) / FDTR Series
Nanosecond and Picosecond pump-probe for anisotropic material thermal properties. The gold-standard TDTR technique has been commercialized.
- 5 ps temporal resolution
- 0.1–1000 W/m·K range
Platform Integration
Extend your existing measurement infrastructure, MPI probe stations, RF/load-pull systems, pulsed-IV, and EM test setups with synchronized thermal and EM field imaging. No rip-and-replace. Your tools, with a new dimension of data.
- MPI TS3500
- RF/pulsed-IV
- emVIEW™ overlay
- SanjVIEW™ API
Find a Distributor Near You
Advanced thermal imaging & materials characterization solutions trusted by researchers, engineers, and manufacturers worldwide. With distributors and sales representatives across North America, Europe, and Asia, our global team is ready to support your characterization needs from semiconductors and RF to photonics, AI, and quantum computing.
Start with your own device
Send us your sample. We'll run a complimentary measurement. No commitment required.
See inside. Measure everything. The only commercial platform for thermal imaging, materials characterization, and multiphysics + EM field imaging for advanced semiconductor devices.
48421 Milmont Dr.
Fremont, CA 94538
+1.408.256.1255
Hours: 8:00am - 5:00pm PST M-F
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Request a Demo
See how our thermal, materials characterization, and multiphysics + EM field imaging platform performs on your advanced semiconductor devices. Book a live demo with one of our engineers.
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